Steven Magdo
17Patents
11h-index
6Co-inventors
65Inventor score
Filing activity: Sep 20, 1972 → May 12, 1992
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4322778A | High performance semiconductor package assembly | Electricity | 234 | Expired |
| US3954523A | Process for fabricating devices having dielectric isolation utilizing anodic treatment and selective oxidation | Emerging Cross-Sectional Technologies | 43 | Expired |
| US4256532A | Method for making a silicon mask | Emerging Cross-Sectional Technologies | 42 | Expired |
| US3955269A | Fabricating high performance integrated bipolar and complementary field effect transistors | Electricity | 37 | Expired |
| US5262719A | Test structure for multi-layer, thin-film modules | Electricity | 33 | Expired |
| US4396933A | Dielectrically isolated semiconductor devices | Electricity | 32 | Expired |
| US3944447A | Method for fabrication of integrated circuit structure with full dielectric isolation utilizing selective oxidation | Emerging Cross-Sectional Technologies | 27 | Expired |
| US4023197A | Integrated circuit chip carrier and method for forming the same | Electricity | 26 | Expired |
| US5347465A | Method of integrated circuit chips design | Electricity | 21 | Expired |
| US4016596A | High performance integrated bipolar and complementary field effect transistors | Electricity | 18 | Expired |
| US4002511A | Method for forming masks comprising silicon nitride and novel mask structures produced thereby | Emerging Cross-Sectional Technologies | 18 | Expired |
| US4005471A | Semiconductor resistor having a high value resistance for use in an integrated circuit semiconductor device | Electricity | 11 | Expired |
| US3956527A | Dielectrically isolated Schottky Barrier structure and method of forming the same | Electricity | 9 | Expired |
| US4261003A | Integrated circuit structures with full dielectric isolation and a novel method for fabrication thereof | Electricity | 9 | Expired |
| US3936856A | Space-charge-limited integrated circuit structure | Electricity | 7 | Expired |
| US3958264A | Space-charge-limited phototransistor | Emerging Cross-Sectional Technologies | 5 | Expired |
| US4965652A | Dielectric isolation for high density semiconductor devices | Electricity | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.