Semiconductor resistor having a high value resistance for use in an integrated circuit semiconductor device
US4005471A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 1975 |
| Grant date | Jan 25, 1977 |
| Priority date | — |
| Expiry date | Mar 17, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/43
Abstract
A semiconductor resistor structure for providing a high value resistance particularly adapted for space charge limited transistor applications, the resistor being fabricated in a semiconductor body having a resistivity in excess of 1 ohm cm., more preferably in semiconductor material that is nearly intrinsic. The resistor has two parallel elongated surface diffused regions in the body of an impurity similar to the background impurity of the body and having a surface concentration sufficient to provide an ohmic contact, the boundaries of said surface diffused regions defined by the interface where the impurity concentration of the diffused region is ten percent more than the impurity concentration of the background impurity of the body. In a preferred embodiment, the surface diffused regions are spaced such that the boundaries intersect with each other, and ohmic contact terminals to each of the diffused regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.