Ohmics contacts of germanium and palladium alloy from group III-V n-type semiconductors
US4011583A · kind A · utility
23Cited by
5References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 27, 1976 |
| Grant date | Mar 8, 1977 |
| Priority date | — |
| Expiry date | May 27, 1996 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/018
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metallization scheme for providing an ohmic contact to n-type III-V semiconductors is described. A metallurgical combination including germanium and palladium is formed on the semiconductor surface either in the form of an alloy or discrete layers. The structure is then heated so that the metallic and semiconductor components interdiffuse to establish the ohmic contact without melting of the metal. One advantage of such a solid state process is the high degree of dimensional control of the contact which is attainable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.