Light-activated semiconductor-controlled rectifier
US4016592A · kind A · utility
13Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 4, 1975 |
| Grant date | Apr 5, 1977 |
| Priority date | — |
| Expiry date | Mar 4, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/263
Abstract
A light-activated semiconductor-controlled rectifier apparatus has four layers of PNPN. The outer N-type layer comprises a first portion having a plurality of short-circuiting apertures and a second portion substantially separated from the first portion by an intermediate layer of P-type. One of the main electrodes is in ohmic contact with the first portion, with the intermediate P-type layer exposed through the short-circuiting apertures, with the periphery of the second portion and with the portion of the intermediate layer adjacent to the second portion, so that a photo signal is radiated on the second portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.