Bidirectional photothyristor device
US4016593A · kind A · utility
14Cited by
8References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 3, 1975 |
| Grant date | Apr 5, 1977 |
| Priority date | — |
| Expiry date | Jun 3, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/263
Abstract
A bidirectional photothyristor device comprises a semiconductive substrate including an NPNPN quintuple layer in which projections of both the outer layers Ns in the stacking direction are not overlapped so as to define two quadruple layer regions each having either one of the outer layers Ns as an end layer, a pair of main electrodes connecting the two quadruple layer regions in parallel relationship, a recess formed between the two quadruple layer regions within the semiconductive substrate and to which two intermediate P-N junctions are exposed, and means for applying a light trigger signal to the recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.