Mask structures for X-ray lithography
US4037111A · kind A · utility
42Cited by
3References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 8, 1976 |
| Grant date | Jul 19, 1977 |
| Priority date | — |
| Expiry date | Jun 8, 1996 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG21K1/10
- WIPO fieldEngines, pumps, turbines
- WIPO sectorMechanical engineering
Abstract
It has been observed that the deposition and patterning of metallic layers on a supported X-ray-transparent film to form a mask for X-ray lithography introduce stresses in the mask structure. In turn these stresses cause distortions of the film and of the high-resolution X-ray-absorptive pattern formed thereon. Various techniques, including new metallization systems, are proposed for minimizing the establishment of stresses in such structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.