Dan Maydan
103Patents
47h-index
138Co-inventors
93Inventor score
Filing activity: Jun 8, 1976 → Jul 20, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4951601A | Multi-chamber integrated process system | Emerging Cross-Sectional Technologies | 997 | Expired |
| US5855681A | Ultra high throughput wafer vacuum processing system | Electricity | 948 | Expired |
| US5000113A | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process | Electricity | 781 | Expired |
| US5186718A | Staged-vacuum wafer processing system and method | Emerging Cross-Sectional Technologies | 700 | Expired |
| US4854263A | Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films | Chemistry; Metallurgy | 693 | Expired |
| US5882165A | Multiple chamber integrated process system | Electricity | 591 | Expired |
| US6825134B2 | Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow | Electricity | 560 | Expired |
| US4872947A | CVD of silicon oxide using TEOS decomposition and in-situ planarization process | Electricity | 431 | Expired |
| US4962063A | Multistep planarized chemical vapor deposition process with the use of low melting inorganic material for flowing while depositing | Emerging Cross-Sectional Technologies | 417 | Expired |
| US5362526A | Plasma-enhanced CVD process using TEOS for depositing silicon oxide | Electricity | 406 | Expired |
| US4892753A | Process for PECVD of silicon oxide using TEOS decomposition | Electricity | 344 | Expired |
| US6170428A | Symmetric tunable inductively coupled HDP-CVD reactor | Electricity | 322 | Expired |
| US4842683A | Magnetic field-enhanced plasma etch reactor | Electricity | 303 | Expired |
| US6167834A | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process | Electricity | 298 | Expired |
| US7110629B2 | Optical ready substrates | Electricity | 297 | Expired |
| US5292393A | Multichamber integrated process system | Electricity | 286 | Expired |
| US7043106B2 | Optical ready wafers | Physics | 275 | Expired |
| US4668365A | Apparatus and method for magnetron-enhanced plasma-assisted chemical vapor deposition | Electricity | 175 | Expired |
| US5849136A | High frequency semiconductor wafer processing apparatus and method | Electricity | 158 | Expired |
| US4618262A | Laser interferometer system and method for monitoring and controlling IC processing | Physics | 150 | Expired |
| US5788778A | Deposition chamber cleaning technique using a high power remote excitation source | Emerging Cross-Sectional Technologies | 138 | Expired |
| US6108189A | Electrostatic chuck having improved gas conduits | Emerging Cross-Sectional Technologies | 138 | Expired |
| US5215619A | Magnetic field-enhanced plasma etch reactor | Electricity | 132 | Expired |
| US5643394A | Gas injection slit nozzle for a plasma process reactor | Electricity | 124 | Expired |
| US5885358A | Gas injection slit nozzle for a plasma process reactor | Electricity | 118 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.