Hydrogen annealing process for stabilizing metal-oxide-semiconductor structures
US4151007A · kind A · utility
42Cited by
1References
11Claims
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Key dates
| Filing date | Oct 11, 1977 |
| Grant date | Apr 24, 1979 |
| Priority date | — |
| Expiry date | Oct 11, 1997 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/128
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Variations in threshold voltage of Metal-Oxide-Silicon (MOS) structures are attenuated by the inclusion in the fabrication process of a hydrogen anneal step using a temperature range of 650 degrees C.ltoreq.T.ltoreq.950 degrees C. This anneal step is designed to be the last step in the fabrication process which is performed at temperatures above 600 degrees C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.