X-ray lithography
US4185202A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 1977 |
| Grant date | Jan 22, 1980 |
| Priority date | — |
| Expiry date | Dec 5, 1997 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70933
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
X-ray lithographic systems as heretofore constructed include a low-attenuation chamber for propagating x-rays from a source toward a mask member that is positioned in close proximity to a resist-coated wafer. Both the mask and the wafer are included in the chamber which typically is either filled with helium or evacuated to a pressure less than about 10.sup.-2 Torr. In accordance with this invention, an x-ray lithographic system is constructed to enable establishment in the wafer-to-mask region of a controlled atmosphere that is separate and distinct from that maintained in the low-attenuation chamber. In this way, an improved lithographic system with advantageous throughput and other characteristics is realized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.