Device fabrication by plasma etching

US4208241A · kind A · utility

Assignee

• Bell Telephone Laboratories, Inc. · US

Inventors

• William Harshbarger · San Jose, US
• Hyman J. Levinstein · Berkeley Heights, US
• Cyril J. Mogab · New Providence, US
• Roy A. Porter · Whitehall, US

Key dates

• Filing date: Jul 31, 1978
• Grant date: Jun 17, 1980
• Expiry date: Jul 31, 1998

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/32137
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

High density fine-line integrated structure fabrication is expedited by use of plasma etching systems which assure straight vertical walls (absence of undercutting). Critical to the sytems is choice of appropriate plasma chemistry. Appropriate systems are characterized by inclusion of recombination centers, as well as active etchant species. Recombination centers which effectively terminate etchant species lifetime in the immediate vicinity of resist walls afford means for controlling etching anisotropy. Use is foreseen in large scale integrated circuitry (LSI) and is expected to be of particular interest for extremely fine design rules, i.e., in Very Large Scale Integrated circuitry.