William Harshbarger
31Patents
15h-index
43Co-inventors
81Inventor score
Filing activity: Apr 24, 1978 → Nov 27, 2007
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6825134B2 | Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow | Electricity | 560 | Expired |
| US6432255B1 | Method and apparatus for enhancing chamber cleaning | Electricity | 368 | Expired |
| US5846373A | Method for monitoring process endpoints in a plasma chamber and a process monitoring arrangement in a plasma chamber | Electricity | 170 | Expired |
| US5647953A | Plasma cleaning method for removing residues in a plasma process chamber | Emerging Cross-Sectional Technologies | 111 | Expired |
| US4208241A | Device fabrication by plasma etching | Electricity | 49 | Expired |
| US6200651A | Method of chemical vapor deposition in a vacuum plasma processor responsive to a pulsed microwave source | Electricity | 38 | Expired |
| US6500356B2 | Selectively etching silicon using fluorine without plasma | Electricity | 34 | Expired |
| US6869838B2 | Deposition of passivation layers for active matrix liquid crystal display (AMLCD) applications | Electricity | 28 | Expired |
| US5911833A | Method of in-situ cleaning of a chuck within a plasma chamber | Emerging Cross-Sectional Technologies | 25 | Expired |
| US7086918B2 | Low temperature process for passivation applications | Electricity | 19 | Expired |
| US7439191B2 | Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications | Electricity | 18 | Expired |
| US7160392B2 | Method for dechucking a substrate | Chemistry; Metallurgy | 18 | Expired |
| US4181564A | Fabrication of patterned silicon nitride insulating layers having gently sloping sidewalls | Emerging Cross-Sectional Technologies | 17 | Expired |
| US6676761B2 | Method and apparatus for dechucking a substrate | Chemistry; Metallurgy | 16 | Expired |
| US6451390B1 | Deposition of TEOS oxide using pulsed RF plasma | Chemistry; Metallurgy | 15 | Expired |
| US6294219A | Method of annealing large area glass substrates | Chemistry; Metallurgy | 11 | Expired |
| US6610374B2 | Method of annealing large area glass substrates | Chemistry; Metallurgy | 9 | Expired |
| US6843258B2 | On-site cleaning gas generation for process chamber cleaning | Emerging Cross-Sectional Technologies | 6 | Expired |
| US6880561B2 | Fluorine process for cleaning semiconductor process chamber | Emerging Cross-Sectional Technologies | 6 | Expired |
| US6858548B2 | Application of carbon doped silicon oxide film to flat panel industry | Emerging Cross-Sectional Technologies | 5 | Expired |
| US6962732B2 | Process for controlling thin film uniformity and products produced thereby | Emerging Cross-Sectional Technologies | 5 | Expired |
| US6352910B1 | Method of depositing amorphous silicon based films having controlled conductivity | Chemistry; Metallurgy | 5 | Expired |
| US6960263B2 | Shadow frame with cross beam for semiconductor equipment | Chemistry; Metallurgy | 4 | Expired |
| US6863077B2 | Method and apparatus for enhanced chamber cleaning | Electricity | 3 | Expired |
| US6981508B2 | On-site cleaning gas generation for process chamber cleaning | Emerging Cross-Sectional Technologies | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.