Method of modifying the development profile of photoresists
US4212935A · kind A · utility
81Cited by
12References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 24, 1978 |
| Grant date | Jul 15, 1980 |
| Priority date | — |
| Expiry date | Feb 24, 1998 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/38
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The cross-sectional profile which is produced upon development of a layer of alkali soluble resin-diazo ketone photoresist is modified by treating the layer with a solvent or solvent mixture which is different from but miscible with the solvent or solvent mixture used to form the resist layer. The treating solvent is believed to dilute the resist solvent in a surface layer portion of the resist thereby modifying the alkaline developer solubility of this portion. Undercut resist profiles may be obtained by this method with normal optical exposure of the resist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.