Device fabrication by plasma etching
US4256534A · kind A · utility
50Cited by
3References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 1978 |
| Grant date | Mar 17, 1981 |
| Priority date | — |
| Expiry date | Jul 31, 1998 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23F4/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Integrated circuit fabrication, e.g., silicon LSI is expedited by plasma etching in any of a novel class of etchants. Appropriate plasma environments are produced by introduction of halide-halogen combinations as exemplified by BCl.sub.3 -Cl.sub.2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.