David N. Wang
44Patents
33h-index
45Co-inventors
85Inventor score
Filing activity: Jul 31, 1978 → Aug 14, 1998
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4951601A | Multi-chamber integrated process system | Emerging Cross-Sectional Technologies | 997 | Expired |
| US5000113A | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process | Electricity | 781 | Expired |
| US4854263A | Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films | Chemistry; Metallurgy | 693 | Expired |
| US5882165A | Multiple chamber integrated process system | Electricity | 591 | Expired |
| US5213650A | Apparatus for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer | Electricity | 495 | Expired |
| US4872947A | CVD of silicon oxide using TEOS decomposition and in-situ planarization process | Electricity | 431 | Expired |
| US4962063A | Multistep planarized chemical vapor deposition process with the use of low melting inorganic material for flowing while depositing | Emerging Cross-Sectional Technologies | 417 | Expired |
| US4960488A | Reactor chamber self-cleaning process | Emerging Cross-Sectional Technologies | 414 | Expired |
| US5362526A | Plasma-enhanced CVD process using TEOS for depositing silicon oxide | Electricity | 406 | Expired |
| US4892753A | Process for PECVD of silicon oxide using TEOS decomposition | Electricity | 344 | Expired |
| US5028565A | Process for CVD deposition of tungsten layer on semiconductor wafer | Emerging Cross-Sectional Technologies | 342 | Expired |
| US4842683A | Magnetic field-enhanced plasma etch reactor | Electricity | 303 | Expired |
| US6167834A | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process | Electricity | 298 | Expired |
| US5292393A | Multichamber integrated process system | Electricity | 286 | Expired |
| US4668365A | Apparatus and method for magnetron-enhanced plasma-assisted chemical vapor deposition | Electricity | 175 | Expired |
| US5215619A | Magnetic field-enhanced plasma etch reactor | Electricity | 132 | Expired |
| US5354715A | Thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process | Electricity | 108 | Expired |
| US5314845A | Two step process for forming void-free oxide layer over stepped surface of semiconductor wafer | Electricity | 90 | Expired |
| US5043299A | Process for selective deposition of tungsten on semiconductor wafer | Emerging Cross-Sectional Technologies | 87 | Expired |
| US4310380A | Plasma etching of silicon | Electricity | 85 | Expired |
| US5210466A | VHF/UHF reactor system | Electricity | 81 | Expired |
| US5300460A | UHF/VHF plasma for use in forming integrated circuit structures on semiconductor wafers | Electricity | 64 | Expired |
| US5166101A | Method for forming a boron phosphorus silicate glass composite layer on a semiconductor wafer | Emerging Cross-Sectional Technologies | 63 | Expired |
| US5204288A | Method for planarizing an integrated circuit structure using low melting inorganic material | Emerging Cross-Sectional Technologies | 50 | Expired |
| US5755886A | Apparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processing | Electricity | 50 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.