Integrated semiconductor circuit structure and method for making it
US4276557A · kind A · utility
53Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 29, 1978 |
| Grant date | Jun 30, 1981 |
| Priority date | — |
| Expiry date | Dec 29, 1998 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The compounds TiSi.sub.2 and TaSi.sub.2 have been found to be suitable substitutes for polysilicon layers in semiconductor integrated circuits. Suitable conducting properties of the compounds are ensured by providing a relatively thin substrate of polysilicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.