Lithographic resist composition for a lift-off process
US4284706A · kind A · utility
18Cited by
11References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 3, 1979 |
| Grant date | Aug 18, 1981 |
| Priority date | — |
| Expiry date | Dec 3, 1999 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0226
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Lithographic resist compositions are provided which permit an improved lift-off process in which the deposition mask with apertures has the desirable negative slope or overhang. The resist composition comprises a phenolic-aldehyde resin, a photosensitizer and Meldrum's diazo, or Meldrum's acid or suitable analogs thereof as a profile modifying agent. The profile modifying agents useful in the present invention have the formula: ##STR1## wherein R.sub.1 is C.sub.1 to C.sub.20 alkyl or aryl, R.sub.2 is H, C.sub.1 to C.sub.20 alkyl or aryl, or together R.sub.1 and R.sub.2 are cycloalkyl, A is N or H.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.