Kenneth Steeples
6Patents
3h-index
3Co-inventors
50Inventor score
Filing activity: Feb 13, 1979 → Mar 14, 2006
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4290825A | Semiconductor devices containing protons and deuterons implanted regions | Electricity | 15 | Expired |
| US4394180A | Method of forming high resistivity regions in GaAs by deuteron implantation | Emerging Cross-Sectional Technologies | 8 | Expired |
| US6911350B2 | Real-time in-line testing of semiconductor wafers | Electricity | 7 | Expired |
| US7119569B2 | Real-time in-line testing of semiconductor wafers | Physics | 2 | Expired |
| US7403023B2 | Apparatus and method of measuring defects in an ion implanted wafer by heating the wafer to a treatment temperature and time to substantially stabilize interstitial defect migration while leaving the vacancy defects substantially unaltered. | Electricity | 2 | Expired |
| US7160742B2 | Methods for integrated implant monitoring | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.