Method for making integrated semiconductor circuit structure with formation of Ti or Ta silicide
US4332839A · kind A · utility
26Cited by
2References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 22, 1981 |
| Grant date | Jun 1, 1982 |
| Priority date | — |
| Expiry date | Jan 22, 2001 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/147
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The compounds TiSi.sub.2 and TaSi.sub.2 have been found to be suitable substitutes for polysilicon layers in semiconductor integrated circuits. Suitable conducting properties of the compounds are ensured by providing a relatively thin substrate of polysilicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.