Mask for structuring surface areas, and method of making it
US4342817A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 3, 1980 |
| Grant date | Aug 3, 1982 |
| Priority date | — |
| Expiry date | Mar 3, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24322
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A mask for structuring surface areas and a method for manufacture thereof. The mask includes at least one metal layer with throughgoing apertures which define the mask pattern and a semiconductor substrate for carrying the metal layer. The semiconductor substrate has throughholes that correspond to the mask pattern. The throughholes in the semiconductor substrate extend from the metal layer-covered surface on the front to at least one tub-shaped recess which extends from the other back surface into the semiconductor substrate. Holes are provided in a surface layer in the semiconductor substrate. The surface layer differs in its doping from the rest of the substrate and the holes which are provided in the surface layer have lateral dimensions larger than the apertures in the metal layer so that the metal layer protrudes over the surface layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.