Semiconductor device
US4377819A · kind A · utility
18Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 20, 1979 |
| Grant date | Mar 22, 1983 |
| Priority date | — |
| Expiry date | Apr 20, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02129
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including at least a resistance element formed of polycrystalline silicon having a high resistivity. An electrode is provided on the high resistance polycrystalline silicon region with a silicon dioxide film and a silicon nitride film being interposed therebetween. The electrode is coupled to the ground potential. In this manner, high stability is obtained in the behavior of the resistance element inasmuch as the formation of a parasitic MOS device under said high resistance region is suppressed, and the threshold voltage of any such MOS device is made raised.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.