Crystallographic etching of III-V semiconductor materials
US4397711A · kind A · utility
18Cited by
1References
8Claims
0Family size
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Key dates
| Filing date | Oct 1, 1982 |
| Grant date | Aug 9, 1983 |
| Priority date | — |
| Expiry date | Oct 1, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/978
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Crystallographic etching in III-V semiconductor materials such as GaAs is achieved, for example, by utilizing a suitable halogen containing entity such as chlorine, bromine and iodine. This crystallographic etching yields in one embodiment essentially vertical surfaces of optical quality. Therefore, the procedure is useful in fabricating integrated circuits and in producing optical devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.