Magnetically enhanced plasma process and apparatus
US4422896A · kind A · utility
81Cited by
7References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 26, 1982 |
| Grant date | Dec 27, 1983 |
| Priority date | — |
| Expiry date | Jan 26, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3405
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Method and apparatus are disclosed for plasma treating a substrate in a hermetic chamber with a magnetic field having lines of force which leave a support, extend across the surface of the substrate and re-enter the support to enclose the substrate exposed surface in a magnetic electron-trapping field. The voltage applied to the substrate support is adjusted to produce a dense glow discharge closely adjacent the substrate surface for reacting chemically therewith.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.