Cathode arrangement for sputtering material from a target in a cathode sputtering unit
US4448653A · kind A · utility
141Cited by
7References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 30, 1981 |
| Grant date | May 15, 1984 |
| Priority date | — |
| Expiry date | Oct 30, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3408
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A cathode arrangement for sputtering material from a target in a cathode sputtering unit comprises a frame-shape magnet disposed adjacent the target and remote from the surface to be sputtered and another magnet located within the frame-shape magnet. The directions of magnetization of the two magnets form an angle of from 45 to 90 degrees. The frame-shape magnet is made of a permanent magnet material having an energy density of at least 40 kJ per m.sup.3. The other magnet is made of a permanent magnet material having an energy density of less than 40 kJ per m.sup.3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.