Process for forming resist masks utilizing O-quinone diazide and pyrene
US4464458A · kind A · utility
9Cited by
24References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 1982 |
| Grant date | Aug 7, 1984 |
| Priority date | — |
| Expiry date | Dec 30, 2002 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0226
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A resist system for semiconductor device fabrication comprised of bottom positive resist layer of a diazoquinone/novolak resist applied to a substrate and overcoated with a like or different diazoquinone/novolak top resist layer which has been sensitized with pyrene and/or its derivatives.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.