Plasma etch process for single-crystal silicon with improved selectivity to silicon dioxide
US4468285A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 1983 |
| Grant date | Aug 28, 1984 |
| Priority date | — |
| Expiry date | Dec 22, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma etching composition is set forth which comprises chlorine in an amount from about 40% to about 90%, a shape modifier species in an amount from about 10% to about 60%, and an etching selectivity enhancer in an amount sufficient to render the composition at least about 10 times as effective for etching a wafer as for etching a masking layer, the above percents being by mole. The composition is useful for plasma etching of a semiconductor wafer masked with a masking layer having an opening therethrough exposing a portion of the wafer which is to be etched in order to form a depression of a desired depth. This allows depressions of increased depth to be formed in wafers without increasing the thickness of the masking layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.