Laser induced dry etching of vias in glass with non-contact masking
US4478677A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 1983 |
| Grant date | Oct 23, 1984 |
| Priority date | — |
| Expiry date | Dec 22, 2003 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB23K2101/40
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Disclosed is an apparatus and method for etching a glass substrate by laser induced dry etching. The apparatus features a housing including a vacuum chamber for receiving the substrate; a vacuum pump coupled to the chamber for evacuating the chamber; a gas source coupled to the chamber for supplying a halogen base gas which is capable of wetting the substrate surface and forming a glass etching specie when activated; a laser source for transmitting a light beam of predetermined wavelength and intensity through the gas; and a mask optically coupled to the laser source for patterning the light beam and also coupled to the chamber so that the light patterned by the mask may fall upon the substrate causing excitation thereof and activation of an etch specie for etching the substrate in conformity with the patterned light. The disclosed method comprises the steps of loading the substrate into a vacuum chamber; evacuating the chamber to a low pressure; controllably introducing a halogen base gas into the chamber to wet substrate surface layer to be etched; and introducing a patterned light beam of predetermined wavelength and intensity through the gas onto the surface layer causing excit…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.