Process gas introduction and channeling system to produce a profiled semiconductor layer
US4479455A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 1983 |
| Grant date | Oct 30, 1984 |
| Priority date | — |
| Expiry date | Mar 14, 2003 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process gas introduction and channeling system for use with apparatus adapted to produce photovoltaic devices by depositing semiconductor layers onto continuously moving substrate material. The deposition apparatus preferably includes at least one deposition chamber having (1) a region in which process gases are decomposed and (2) a manifold from which process gases are introduced to flow through the downstream decomposition region. In the preferred embodiment, as the process gases flow through the decomposition region, they are disassociated and recombined under the influence of an electromagnetic field. The species and combinations of process gases thus formed are deposited onto the substrate material. The process gas introduction and channeling system described herein, is adapted to direct the process gases introduced into each of the at least one deposition chamber to pass through the decomposition region thereof in a direction substantially parallel to the direction of travel of the substrate material, whereby substantially uniform semiconductor layers are deposited atop the entire surface of the substrate material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.