Method for growing silicon-including film by employing plasma deposition
US4481229A · kind A · utility
129Cited by
0References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 20, 1983 |
| Grant date | Nov 6, 1984 |
| Priority date | — |
| Expiry date | Jun 20, 2003 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/105
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for growing a silicon-including film is disclosed in which the above film is grown on a surface of a substrate by using, as a discharge gas, a halogenide silicon gas or a gas mixture containing a halogenide silicon gas in a plasma deposition apparatus including a vacuum chamber, means for supplying microwave power to the vacuum chamber, means for forming a magnetic field in at least part of the vacuum chamber, means for introducing the discharge gas into the vacuum chamber, and means for holding the substrate within the vacuum chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.