Laser induced dry chemical etching of metals
US4490210A · kind A · utility
32Cited by
6References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 24, 1984 |
| Grant date | Dec 25, 1984 |
| Priority date | — |
| Expiry date | Jan 24, 2004 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23F4/02
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method of etching a metallized substrate by laser radiation. The substrate is exposed to a selected gas which spontaneously reacts with the metal forming a solid reaction product with the metal by a partial consumption of the metal. A beam of radiation of a wavelength suitable for absorption by the reaction product and/or by the metal thereunder is applied in a desired pattern to vaporize the reaction product and thereby selectively etch the metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.