Method of manufacturing single-crystal film
US4498951A · kind A · utility
26Cited by
7References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 24, 1982 |
| Grant date | Feb 12, 1985 |
| Priority date | — |
| Expiry date | Sep 24, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/969
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The whole surface of a polycrystalline or amorphous semiconductor film deposited so as to continuously cover the surface of a single-crystal substrate and an insulating film is irradiated with a laser beam or electron beam, thereby to selectively melt only those parts of the polycrystalline or amorphous semiconductor film which overlie the insulating film. Thus, a single-crystal semiconductor film is formed only the insular insulating film formed on the single-crystal substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.