Etching techniques
US4498953A · kind A · utility
166Cited by
2References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 27, 1983 |
| Grant date | Feb 12, 1985 |
| Priority date | — |
| Expiry date | Jul 27, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A highly selective--greater than 100 to 1--etch for silicon, tantalum, tantalum silicide and tantalum nitride is achieved by using polyatomic halogen fluorides. The selectivity is achievable without employing plasmas or wet etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.