Mask and system for mutually aligning objects in ray exposure systems

US4513203A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Harald Bohlen · Eppelheim, DE
• Helmut Engelke · Altdorf, DE
• Johann Greschner · Neckartenzlingen, DE
• Reinhold Muhl · Altdorf, DE
• Peter Nehmiz · Stuttgart, DE
• Hans-Joachim Trumpp · Stuttgart, DE

Key dates

• Filing date: Jun 29, 1984
• Grant date: Apr 23, 1985
• Expiry date: Jun 29, 2004

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J37/3045
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

For mutually aligning (registering) mask and substrate in X- or corpuscular ray lithography, an electron beam (16) is used which extends collaterally to the exposure beam (ion beam or X-ray) and which is suppressed during the actual exposure process. For coupling the electron beam to the exposure beam path, a magnetic field (7) is used. The accurate relative position of mask and substrate is determined during alignment by tilting the electron beam. Fine alignment during exposure is effected by suitably tilting the ion beam or shifting the substrate relative to the X-ray. The mask (10) used for exposure consists of a very thin silicon layer with a pattern area (M) and a registration area (R) spatially separated therefrom. The registration area consists of a plurality of openings, the pattern area of blind holes.