Merged platinum silicide fuse and Schottky diode and method of manufacture thereof
US4518981A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 12, 1981 |
| Grant date | May 21, 1985 |
| Priority date | — |
| Expiry date | Nov 12, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A merged platinum silicide fuse and Schottky diode structure and method of manufacturing the merged structure is presented. The merged structure is formed by an insulating layer having an aperture over a silicon substrate. A shaped layer of polysilicon lies on the insulating layer and contacts the substrate through the aperture; a layer of platinum silicide in the same shape as the polysilicon layer covers the polysilicon layer. The region of polysilicon - PtSi layers over the substrate contact forms a Schottky diode and the region on the insulating layer forms the fuse. This merged structure has superior Schottky diode electrical characteristics and is more compact compared to prior art structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.