Ronald L. Schlupp
7Patents
4h-index
7Co-inventors
50Inventor score
Filing activity: Nov 12, 1981 → May 19, 2003
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4639288A | Process for formation of trench in integrated circuit structure using isotropic and anisotropic etching | Electricity | 47 | Expired |
| US4518981A | Merged platinum silicide fuse and Schottky diode and method of manufacture thereof | Electricity | 21 | Expired |
| US6699765B1 | Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layer | Electricity | 15 | Expired |
| US6566733B1 | Method and system for providing a power lateral PNP transistor using a buried power buss | Electricity | 7 | Expired |
| US6815353B2 | Multi-layer film stack polish stop | Electricity | 4 | Expired |
| US7098113B1 | Method and system for providing a power lateral PNP transistor using a buried power buss | Electricity | 2 | Expired |
| US6913981B2 | Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layer | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.