Gas for selectively etching silicon nitride and process for selectively etching silicon nitride with the gas
US4529476A · kind A · utility
52Cited by
3References
13Claims
0Family size
Assignees
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Key dates
| Filing date | Jun 1, 1984 |
| Grant date | Jul 16, 1985 |
| Priority date | — |
| Expiry date | Jun 1, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A dry-etching gas suitable for selective etching of silicon nitride and a process for selectively dry-etching silicon nitride with the dry-etching gas are disclosed. Silicon nitride can be dry-etched with a higher selectivity or at a higher etching rate than silicon dioxide and silicon, and a process for fabricating semi-conductor devices can be simplified and devices with a novel structure can be realized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.