Method for making integrated circuit devices using a layer of indium arsenide as an antireflective coating
US4529685A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 2, 1984 |
| Grant date | Jul 16, 1985 |
| Priority date | — |
| Expiry date | Mar 2, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved method for making an integrated circuit device is disclosed which comprises coating a reflective layer with an antireflective coating comprising a layer of indium arsenide before applying a layer of photosensitive material or photoresist during production of the device. Light passing through the photosensitive material is absorbed by the antireflective coating so that only the minor amount of light required for alignment is reflected back through the photosensitive material resulting in sharper pattern definition in the photoresistive material and better process control overall. The antireflective indium arsenide layer is applied in a thickness of at least 500 angstroms and is further characterized by an 10 to 25% reflectivity relatively independent of coating thickness and wave length of light in the frequency range normally used to expose photoresist material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.