Trapped charge bidirectional power FET
US4542396A · kind A · utility
17Cited by
9References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 23, 1982 |
| Grant date | Sep 17, 1985 |
| Priority date | — |
| Expiry date | Sep 23, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
Abstract
Lateral FET structure is disclosed for bidirectional power switching, including AC application. A plurality of integrated FETs each have left and right source regions and left and right channel regions with a common drift region therebetween, and conduct current in either direction according to the polarity of main terminals. Gating means includes gate electrode means disposed proximate and insulated from the channel regions and adapted for storing trapped charge tunneled through an insulated layer from a charging electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.