Lateral bidirectional notch FET with extended gate insulator
US4546367A · kind A · utility
35Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 21, 1982 |
| Grant date | Oct 8, 1985 |
| Priority date | — |
| Expiry date | Jun 21, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/668
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Lateral FET structure is disclosed for bidirectional power switching, including AC application. A notch extends downwardly from a top major surface to separate left and right source regions and left and right channel regions, and direct the drift region current path between the channels around the bottom of the notch. Gate electrode means in the notch proximate the channels controls bidirectional conduction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.