Non-volatile memory cell fuse element
US4546454A · kind A · utility
46Cited by
1References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 5, 1982 |
| Grant date | Oct 8, 1985 |
| Priority date | — |
| Expiry date | Nov 5, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory cell circuit is used to replace a polysilicon fuse as an enabling element for a redundant row or column of memory cells in a semiconductor memory array. The fuse is divided into read and program sections, allowing a large device to be used for reading and a small device to be used for programming, thus permitting programming of all fuses in a redundant row simultaneously with minimal current consumption. The circuit may be embodied as a five-device or a four-device configuration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.