High current thin film transistor
US4547789A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 1983 |
| Grant date | Oct 15, 1985 |
| Priority date | — |
| Expiry date | Nov 8, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/40
Abstract
A new and improved thin film field effect transistor has increased operating current and speed. The transistor includes a drain, an insulator, and a source formed in layers and vertically arranged with respect to a substrate and each other. The drain, however, and source layers form a plurality of non-coplanar surfaces with respect to the substrate. The device further includes a deposited semiconductor material overlying the non-coplanar surfaces to form a plurality of current conduction channels between the drain and source. A gate insulator overlies the semiconductor material, and a gate electrode overlies the gate insulator. The devices can also include carrier injection structure including a doped semiconductor material electrically coupled to the drain, the source, and the deposited semiconductor material for increasing the injection of current conduction carriers in the current conduction channels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.