Bidirectional power FET with field shaping
US4553151A · kind A · utility
21Cited by
11References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 23, 1982 |
| Grant date | Nov 12, 1985 |
| Priority date | — |
| Expiry date | Sep 23, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/252
Abstract
Lateral FET structure is disclosed for bidirectional power switching, including AC application. Voltage blocking capability is enhanced by field shaping in the drift region. In the OFF state, depletion from a channel region junction and from a field shaping region junction spread toward each other through the drift region to straighten out field lines and prevent curvature crowding of field lines at edges of notch means extending into the drift region and separating a pair of source regions and a pair of channel regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.