Lateral bidirectional dual notch shielded FET
US4571513A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 1982 |
| Grant date | Feb 18, 1986 |
| Priority date | — |
| Expiry date | Jun 21, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/611
Abstract
Lateral FET Structure is disclosed for bidirectional power switching, including AC application. A pair of notches, each with a gate electrode, extend downwardly from a top major surface to separate left and right source regions and left and right channel regions, and direct the drift region current path between the channels around the bottoms of the notches. In the OFF state, each gate electrode shields its respective notch edge drift region portion from the electric field gradient from the other gate electrode, to prevent depletion along the notches and unwanted inducement of conduction channels, thus affording higher OFF state voltage blocking capability. High density, high voltage plural FET structure is disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.