High density, high voltage power FET
US4571606A · kind A · utility
13Cited by
6References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 21, 1982 |
| Grant date | Feb 18, 1986 |
| Priority date | — |
| Expiry date | Jun 21, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/65
Abstract
Lateral FET structure is disclosed with an insulative region such as porous silicon filled with oxide formed in the drift region to divert the drift region current path and increase the length thereof to afford higher OFF state blocking voltage without increasing lateral dimensions. Combinations involving bidirectional power switching structures are also disclosed, as well as a multicell matrix array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.