Lateral bidirectional dual notch FET with non-planar main electrodes
US4574207A · kind A · utility
13Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 21, 1982 |
| Grant date | Mar 4, 1986 |
| Priority date | — |
| Expiry date | Jun 21, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/663
Abstract
Lateral FET structure is disclosed for bidirectional power switching, including AC appliction. Main electrodes extend downwardly into and through respective source regions and at least into regions having respective channel portions. Notch gate structure extends into the drift region and separates the main electrodes and the respective source regions and channels. High density, high voltage plural FET structure is disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.