Split gate EFET and circuitry
US4574209A · kind A · utility
24Cited by
5References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 21, 1982 |
| Grant date | Mar 4, 1986 |
| Priority date | — |
| Expiry date | Jun 21, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/914
Abstract
Lateral FET structure is disclosed for bidirectional power switching. A split gate structure is provided to prevent unwanted formation of potential conduction channels in the OFF state of the FET. This enables the gate to be referenced in common to one of the source regions in the OFF state while still affording high blocking voltage capability. A multicell matrix array is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.