Forming a conductive, protective layer for multilayer metallization
US4580332A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 26, 1984 |
| Grant date | Apr 8, 1986 |
| Priority date | — |
| Expiry date | Mar 26, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/97
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved integrated circuit structure, and method of making the structure, is disclosed wherein at least one metallization layer is coated with a conductive indium arsenide layer during production of the structure and an upper metallization layer subsequently is applied to the structure wherein at least a portion of the subsequent metallization layer is in ohmic contact with the conductive indium arsenide layer whereby the lower metallization layer is protected by the intervening indium arsenide layer during subsequent removal of the upper metallization layer if subsequent reworking of the structure becomes necessary. The use of the indium arsenide layer over a metallization layer further enhances the construction process by the use of its antireflective properties during patterning of a photoresist applied over the indium arsenide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.