Method for preparation of semiconductor structures and devices which utilize polymeric dielectric materials
US4599136A · kind A · utility
42Cited by
9References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 3, 1984 |
| Grant date | Jul 8, 1986 |
| Priority date | — |
| Expiry date | Oct 3, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabrication of semiconductor structures which utilize trenches filled with polymeric dielectric materials to isolate segments thereof is disclosed. Contamination of the polymeric dielectric during processing of structural segments is avoided by filling the trenches with disposable polymer through formation of conductive patterns upon the structure, with subsequent removal of the disposable polymer and replacement with the desired polymeric dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.