Planar magnetron sputtering with modified field configuration
US4606802A · kind A · utility
26Cited by
4References
33Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 18, 1984 |
| Grant date | Aug 19, 1986 |
| Priority date | — |
| Expiry date | Dec 18, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3458
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Planar magnetron sputtering sputters a target formed of plural target members from their principal surface. The plural target members are arranged on an electrode. The sputtering is carried out in such a condition that an electric field and magnetic field are substantially parallel in their direction at the boundary regions among the plural target members.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.