Hidetsugu Ogishi
20Patents
10h-index
42Co-inventors
71Inventor score
Filing activity: Dec 18, 1984 → Dec 12, 2003
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6737318B2 | Semiconductor integrated circuit device having switching misfet and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring | Electricity | 105 | Expired |
| US5504029A | Method of producing semiconductor integrated circuit device having memory cell and peripheral circuit MISFETs | Electricity | 79 | Expired |
| US5153685A | Semiconductor integrated circuit device having switching MISFET and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring | Electricity | 57 | Expired |
| US4610774A | Target for sputtering | Electricity | 29 | Expired |
| US5202275A | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 27 | Expired |
| US4606802A | Planar magnetron sputtering with modified field configuration | Electricity | 26 | Expired |
| US5331191A | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 22 | Expired |
| US5930624A | Method of producing semiconductor integrated circuit device having switching MISFET and capacitor element including wiring | Electricity | 17 | Expired |
| US5780882A | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 14 | Expired |
| US5739589A | Semiconductor integrated circuit device process for fabricating the same and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 11 | Expired |
| US6127255A | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6169324A | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 7 | Expired |
| US5557147A | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 5 | Expired |
| US5811316A | Method of forming teos oxide and silicon nitride passivation layer on aluminum wiring | Emerging Cross-Sectional Technologies | 5 | Expired |
| US5753550A | Semiconductor integrated circuit device having switching MISFET and capacitor element and method of producing the same, including wiring therefor and method of producing such wiring | Electricity | 5 | Expired |
| US6548847B2 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING A FIRST WIRING STRIP EXPOSED THROUGH A CONNECTING HOLE, A TRANSITION-METAL FILM IN THE CONNECTING HOLE AND AN ALUMINUM WIRING STRIP THEREOVER, AND A TRANSITION-METAL NITRIDE FILM BETWEEN THE ALUMINUM WIRING STRIP AND THE TRANSITION-METAL FILM | Emerging Cross-Sectional Technologies | 5 | Expired |
| US6342412B1 | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 4 | Expired |
| US6894334B2 | Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same | Emerging Cross-Sectional Technologies | 3 | Expired |
| US7189636B2 | Fabrication method of semiconductor integrated circuit device | Electricity | 2 | Expired |
| US6281071A | Method of producing semiconductor integrated circuit device having switching MISFET and capacitor element including wiring therefor and method of producing such wiring | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.