Method of making three dimensional semiconductor devices in selectively laser regrown polysilicon or amorphous silicon layers
US4609407A · kind A · utility
66Cited by
8References
38Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 19, 1983 |
| Grant date | Sep 2, 1986 |
| Priority date | — |
| Expiry date | Dec 19, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Herein disclosed is a semiconductor device having at least one lower resistance region formed in the single-crystalline semiconductor film which is so formed to continuously coat both a single-crystalline semiconductor substrate and an insulating film formed on the surface of the substrate. Since the aforementioned single-crystalline semiconductor film is used, many advantages which are not attained from the semiconductor device according to the prior art can be obtained. The aforementioned single-crystalline semiconductor film is formed by irradiating a polycrystalline or amorphous semiconductor film with a laser beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.